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Monday, August 10, 2020 | History

2 edition of Grain boundaries and interfaces found in the catalog.

Grain boundaries and interfaces

International Conference on the Structure and Properties of Grain Boundaries and Interfaces Yorktown Heights, N.Y. 1971.

Grain boundaries and interfaces

proceedings of the International Conference on the Structure and Properties of Grain Boundaries and Interfaces, 23-25 August, 1971

by International Conference on the Structure and Properties of Grain Boundaries and Interfaces Yorktown Heights, N.Y. 1971.

  • 230 Want to read
  • 27 Currently reading

Published by North-Holland Pub. Co. in Amsterdam .
Written in English

    Subjects:
  • Crystals -- Defects -- Congresses.

  • Edition Notes

    Includes bibliographical references and indexes.

    Statementguest editors, P. Chaudhari, J. W. Matthews.
    SeriesSurface science ;, v. 31
    ContributionsChaudhari, Praveen, 1937- ed., Matthews, John Wauchope, 1932- ed.
    Classifications
    LC ClassificationsQD506 .S8 vol. 31, QD921 .S8 vol. 31
    The Physical Object
    Paginationix, 622 p. :
    Number of Pages622
    ID Numbers
    Open LibraryOL5116990M
    ISBN 100720402506
    LC Control Number74189910

      Grain boundaries play an important role in dictating the mechanical and physical properties of nanocrystalline (NC) materials because of the increased volume fraction of intercrystalline components as the grain size decreases. In general, grain boundaries have a high energy level and there exists a thermodynamic driving force to reduce the overall area of grain boundaries through grain. Grain/interphase boundaries/interfaces of varying misorientations, free volume fractions, curvatures and irregularities are present in materials, both 3D and 2D, regardless of whether these materials are crystalline or amorphous/glassy. Therefore, a question arises about the central idea on which a general description of grain/interphase.

    interfaces and grain boundaries with the near-atomic resolution. by TEM-based techniques, in particular STEM, requires the two. grains to have a common zone axis direction that is close to the. The standard way of modeling plasticity in polycrystals is by using the crystal plasticity model for single crystals in each grain, and imposing suitable traction and slip boundary conditions across grain boundaries. In this fashion, the system is modeled as a collection of boundary-value problems with matching boundary conditions. In this paper, we develop a diffuse-interface crystal.

    Polycrystalline Semiconductors: Grain Boundaries and Interfaces. Springer-Verlag Berlin Heidelberg. E. Tarnow, P. Bristowe, A search query can be a title of the book, a name of the author, ISBN or anything else. Read more about ZAlerts. Author / ISBN / Topic / Any search query.   Yingchu Chen, Jie Shi, Xitao Li, Siqi Li, Xinding Lv, Xiangnan Sun, Yan-Zhen Zheng, Xia Tao, A universal strategy combining interface and grain boundary engineering for negligible hysteresis and high efficiency (%) planar perovskite solar cells, Journal of Materials Chemistry A, /D0TAK, ().


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Grain boundaries and interfaces by International Conference on the Structure and Properties of Grain Boundaries and Interfaces Yorktown Heights, N.Y. 1971. Download PDF EPUB FB2

The general approach of the book has two main goals: to lead the reader from the concept of ‘ideal’ to ‘real’ grain boundaries; to depart from established knowledge and address the opportunities emerging through "grain boundary engineering", the control Grain boundaries and interfaces book morphological and crystallographic features that affect material properties.

Polycrystalline Semiconductors Grain Boundaries and Interfaces. Editors: Möller, Hans J., Strunk, Horst P., Werner, Juergen (Eds.) Free Preview. Surfaces, grain boundaries and interfaces represent the third important type of defects controlling the properties of materials. Surface energy is in general anisotropic, resulting in particular crystal shapes describable by a Wulff plot construction.

This book summarizes the most recent aspects of polycrystalline semiconductors as presented at the conference Polycrystalline Semiconductors - Grain Boundaries and Interfaces. It contains 12 review articles on selected topics written by experts in their fields and 41 complementary contributed papers.

Review from Ringgold Inc., ProtoView: Editors Popov and Popova present students, academics, researchers, and professionals working in a wide variety of contexts with a volume of peer-reviewed selected academic papers focused on contemporary research on the properties of grain boundaries and interfaces.

The editors have organized the contributions that make up the main body of the text in. In order to test the theory, an Al– at. % Zn alloy was fabricated and aged to encourage grain boundary precipitation.

Regions of precipitate/matrix interfaces at grain boundaries (satisfying d 1 ≠ d 2) were surveyed and imaged in a tilted illumination mode.

The objective aperture included only one strongly diffracted beam from each of. The grain boundary is not an ideal atom source with no energy barrier for operation, but a source needing a critical driving force that varies with the nature of the boundary and particularly its structure.

In solid state sintering, because the surface is replaced by the grain boundary, the grain boundary energy impedes sintering. Beneficial effects of potassium iodide incorporation on grain boundaries and interfaces of perovskite solar cells† Yin Yang, a Lili Wu,* ab Xia Hao, * b Zeguo Tang, c Huagui Lai, a Jingquan Zhang, ab Wenwu Wang a and Lianghuan Feng a.

Within these headings attention was paid to grain boundaries, the influence of chemical processes on the behaviour of interfaces, diffusion bonding, characterization of fracture, and crack propagation by fatigue and by stress corrosion.

Neutral grain boundaries in the Cu(In,Ga)Se2 layer are predicted to be most detrimental if they are parallel to the main junction and located within the depletion region. For columnar grain boundaries with a grain size near 1 μm, the effective grain-boundary recombination velocity must be.

A rapid development of large-current applications, for example, has been hampered by the critical current-limiting properties of high-angle grain boundaries, demanding special efforts to circumvent their presence in cables and tapes.

About this book. The International Symposium was organized to capture the state of our knowledge on the science and technology of interfaces. The Symposium (in honor of Dr.

Rath) was held during the TMS Annual meeting, Febat Seattle WA. Grain Boundary Effects in High and Low T c Superconductors (Pages: ). A grain boundary is a single-phase interface, with crystals on each side of the boundary being identical except in orientation.

The term "crystallite boundary" is sometimes, though rarely, used. Grain boundary areas contain those atoms that have been perturbed from their original lattice sites, dislocations, and impurities that have migrated.

Reflections on the Analysis of Interfaces and Grain Boundaries by Atom Probe Tomography - Benjamin M. Jenkins, Frédéric Danoix, Mohamed Gouné, Paul A.J. Bagot, Zirong Peng, Michael P. The influence of grain boundaries and interfaces on critical current density in both high-temperature, cuprate superconductors and conventional superconductors is discussed.

Recent measurements of the critical current density of individual grain boundaries in yttrium barium cuprate are also reviewed. A grain boundary is the interface between two grains, or crystallites, in a polycrystalline boundaries are 2D defects in the crystal structure, and tend to decrease the electrical and thermal conductivity of the material.

Most grain boundaries are preferred sites for the onset of corrosion and for the precipitation of new phases from the solid. Because grain boundaries form a continuous network throughout such materials, their properties may limit their practical use.

One of the serious phenomena which evoke these limitations is the grain boundary segregation of impurities. It results in the loss of grain boundary cohesion and consequently, in brittle fracture of the materials. Cite this chapter as: Durand-Charre M.

() Grains, grain boundaries and interfaces. In: Microstructure of Steels and Cast Irons. Engineering Materials and Processes. Polycrystalline Semiconductors: Grain Boundaries and Interfaces - Ebook written by Hans J.

Möller, Horst P. Strunk, Jürgen H. Werner. Read this book using Google Play Books app on your PC, android, iOS devices. Download for offline reading, highlight, bookmark or take notes while you read Polycrystalline Semiconductors: Grain Boundaries and Interfaces. The Role of Grain Boundaries and Surfaces in Ceramics Search within book.

Front Matter. Pages i-xiv. PDF. Keynote Address: Equilibria and Transport in Ceramic Oxide Interfaces. Keynote Address: Equilibria and Transport in Ceramic Oxide Interfaces. Alcock. Pages. Abstract. Grain boundaries are the most common interfaces always present in materials if they are not in a single crystal form.

Their presence affects a large variety of material properties since many important physical processes, such as diffusion, decohesion, segregation, cavitation, corrosion etc., occur preferentially at grain boundaries (for recent reviews see []).The Paperback of the Polycrystalline Semiconductors: Grain Boundaries and Interfaces by Hans J.

Mïller at Barnes & Noble. FREE Shipping on $35 or more! Due to COVID, orders may be delayed.These interfaces are better known in materials science as grain boundaries (Morris, ).

The interest in grain boundaries arises from the fact that these are sites where adjoining crystals are located and, as a result, it is more likely that mechanical stress concentrations build up.